Silicon/Silicon Dioxide wafer

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Silicon/silicon dioxide (Si/SiO2) Wafers

Product Description:

Silicon/silicon dioxide (Si/SiO2) thermal oxide wafers are widely used for FET substrates, surface microscopy analysis as well as other applications. The silicon dioxide layer is formed on silicon wafer surface at a high temperature in the presence of an oxidant.

Besides optical grade silicon wafer, we also offer silicon wafer to SEMI standards for other applications as well.

Specification:

Crystal Growth Method	Czochralski (CZ) or Float Zone (FZ) Method
Orientation	<111>, <100> or other Orientations
Diameter	2 Inches, 3 Inches, 4 Inches, 6 Inches
P type Dopant	Typical Boron
P type Resistivity	Typical 1 ~ 100 ohm/cm
N type Dopant	Typical Phosphorus
N type Resistivity	Typical 1 ~ 100 ohm/cm
SiO2 thickness	Typical 2µm

Silicon/silicon dioxide (Si/SiO2) Wafers:

3 Inch Si/SiO2 single side polished wafers in stock, 0.38mm thickness, P type, <100> orientation, 2um SiO2 thickness on both sides, PSSS-32O1122 ($62.0):



		Contact us for quantity pricing.

4 Inch Si/SiO2 single side polished wafers in stock, 0.525mm thickness, P type, <100> orientation, 2um SiO2 thickness on both sides, PSSS-33O1122 ($96.0):



		Contact us for quantity pricing.